The Infineon Technologies IRFU3711ZPBF MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of applications, including discrete semiconductor products. The device is packaged in an IPAK (TO-251) case, which is ideal for through-hole mounting. The IRFU3711ZPBF MOSFET has a maximum power dissipation of 79W (Tc) and a drain-source breakdown voltage of 20V. The device features a continuous drain current of 93A (Tc) @ 25°C and a gate-source threshold voltage of 2.45V @ 250μA. The maximum Rds On @ Id,Vgs is 5.7 mOhm @ 15A, 10V. The MOSFET has a maximum gate-source voltage of ±20V and a maximum input capacitance of 2160pF @ 10V. The device has a medium popularity and a balanced supply and demand status.