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Same model may have multiple batches, images only for reference.
IRFU3710Z-701P Real Image
Same model may have multiple batches, images only for reference.

IRFU3710Z-701P

Part No IRFU3710Z-701P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A IPAK
Datasheet
IRFU3710Z-701P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 2930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069611-IRFU3710Z-701P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3710Z-701P CAD Model

Description

The supply and demand status is balanced, and the packaging is tube/rail. This component is designed for use as an N-channel MOSFET with a power dissipation of 140W (Tc). It has a drive voltage of 10V and a temperature range for operating of -55°C to 175°C (TJ). The case/package is IPAK (TO-251), and the dimension is TO-251-3 Short Leads, IPak, TO-251AA. It has a drain-source breakdown voltage of 100V and a continuous drain current of 42A (Tc). The maximum gate-source voltage is ±20V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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Availability: 8,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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