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IRFU5505

Part No IRFU5505
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) | MOSFET P-CH 55V 18A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 32nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 650pF at 25V
Power Dissipation (Maximum) 57W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188112-IRFU5505
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU5505 CAD Model

Description

The 1188112-IRFU5505 from Infineon Technologies is a P-Channel MOSFET transistor suitable for use in discrete semiconductor products.

  • Maximum Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 18A
  • Package: IPAK (TO-251)
  • Maximum Power Dissipation: 57W
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 32nC @ 10V
  • Input Capacitance: 650pF @ 25V
  • Device Status: Obsolete
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7963 $51.7595
155+ $0.6534 $101.2770
240+ $0.6330 $151.9200
330+ $0.6126 $202.1580
425+ $0.5922 $251.6850
570+ $0.5309 $302.6130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 116 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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