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Same model may have multiple batches, images only for reference.
IRFZ34NSTRLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFZ34NSTRLPBF

Part No IRFZ34NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 29A D2PAK
Datasheet
IRFZ34NSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017731-IRFZ34NSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ34NSTRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 29A @ 25°C.

  • Power Dissipation: 3.8W (Ta), 68W (Tc)
  • Maximum Rds On: 40 mOhm @ Id,Vgs of 16A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 34nC @ 10V
  • Package: D2PAK case, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: through hole
  • Suitable for: use in discrete semiconductor products
  • Temperature Range: -55°C to 175°C (TJ)

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Quantity Unit Price Ext. Price
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230+ $0.4444 $102.2120
350+ $0.4306 $150.7100
480+ $0.4167 $200.0160
625+ $0.4028 $251.7500
835+ $0.3611 $301.5185
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Availability: 5,600 pieces
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