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IRFZ48VS

Part No IRFZ48VS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 72A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 1985pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 123370-IRFZ48VS
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFZ48VS CAD Model

Description

The Infineon Technologies IRFZ48VS is a N-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 72A @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 72A @ 25°C
  • Maximum Power Dissipation: 150W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Status: obsolete (EOL)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Maximum Rds On at Id,Vgs: 12 mOhm @ 43A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and demand status: limited
  • Quantity per package: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4763 $59.0971
41+ $2.8524 $116.9484
63+ $2.7634 $174.0942
87+ $2.6742 $232.6554
112+ $2.5850 $289.5200
150+ $2.3176 $347.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,320 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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