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Same model may have multiple batches, images only for reference.
IRG4BC10SD-S Real Image
Same model may have multiple batches, images only for reference.

IRG4BC10SD-S

Part No IRG4BC10SD-S
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | IGBT 600V 14A 38W D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 14A
Current - Collector Pulsed (Icm) 18A
Vce(on) (Maximum) at Vge, Ic 1.8V at 15V, 8A
Maximum Power 38W
Switching Energy 310μJ (on), 3.28mJ (off)
Input Type Standard
Gate Charge 15nC
Td (on/off) at 25°C 76ns/815ns
Test Condition 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr) 28ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188215-IRG4BC10SD-S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC10SD-S CAD Model

Description

The Infineon Technologies IRG4BC10SD-S is an obsolete electronic component with medium popularity.

  • Supplier Device Package: D2PAK
  • Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Win Source Part Number: 1188215-IRG4BC10SD-S
  • Maximum Power: 38W
  • Voltage Collector Emitter Breakdown: 600V
  • Switching Energy: 310μJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Reverse Recovery Time (trr): 28ns

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