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Same model may have multiple batches, images only for reference.
SI5936DU-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5936DU-T1-GE3

Part No SI5936DU-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 6A PWRPK CHPFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 6A
Rds On (Maximum) at Id, Vgs 30mOhm at 5A, 10V
Vgs(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 320pF at 15V
Power - Max 10.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package PowerPAK ChipFET Dual
Supplier Device Package PowerPAK ChipFet Dual
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800586-SI5936DU-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5936DU-T1-GE3 CAD Model

Description

The SI5936DU-T1-GE3 FET from Vishay Siliconix is a dual N-channel logic level gate FET with a drain-to-source voltage rating of 30V.

  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 6A
  • Power Rating: 10.4W
  • Input Capacitance: 320pF @ 15V
  • Gate Charge: 11nC @ 10V
  • Rds On: 30mOhm (Max) @ 5A, 10V
  • Vgs(th): 2.2V (Max) @ 250μA
  • Package: PowerPAK ChipFet Dual
  • Mounting Style: SMD
  • Operating Temperature Range: -55°C to 150°C
  • Packaging: Reel
  • Manufacturer Pack Quantity: 3,000

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Quantity Unit Price Ext. Price
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230+ $0.4351 $100.0730
360+ $0.4215 $151.7400
495+ $0.4079 $201.9105
635+ $0.3943 $250.3805
850+ $0.3535 $300.4750
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