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Same model may have multiple batches, images only for reference.
IRG4BC10UPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC10UPBF

Part No IRG4BC10UPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 8.5A 38W TO220AB
Datasheet
IRG4BC10UPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 8.5A
Pulsed Collector Current 34A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 5A
Maximum Power Dissipation 38W
Total Switching Energy(Ets) 140μJ (on), 120μJ (off)
Input Type Standard
Gate Charge 15nC
Turn-on and Turn-off delay time 40ns/87ns
Testing Conditions 480V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr) 28ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 205420-IRG4BC10UPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC10UPBF CAD Model

Description

The Infineon Technologies IRG4BC10UPBF is a through-hole IGBT transistor with a maximum current collector of 8.5A and a VCEO maximum collector-emitter breakdown voltage of 600V.

  • Maximum Current Collector: 8.5A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 38W
  • Gate Charge: 15nC
  • Total Switching Energy (Ets): 140μJ (on), 120μJ (off)
  • Turn-on and Turn-off Delay Time: 40ns/87ns
  • Packaging: TO-220AB

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