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FDS7779Z

Name: FDS7779Z
Brand: Fairchild/ON Semiconductor
SKU: 453472
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	FDS7779Z
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 30V 16A 8SOIC
Datasheet	FDS7779Z Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	98nC @ 10V
Max Input Capacitance	3800pF @ 15V
Maximum Gate-Source Voltage	±25V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	7.2 mOhm @ 16A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	1038422-FDS7779Z
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian FDS7779Z CAD Model

Description

The FDS7779Z is a P-Channel MOSFET type electronic component manufactured by Fairchild/ON Semiconductor.

Case/Package: 8-SO
Temperature Range: -55°C to 150°C (TJ)
Power Dissipation (max): 2.5W (Ta)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate Charge: 98nC @ 10V
Maximum Input Capacitance: 3800pF @ 15V
Maximum Rds On at Id,Vgs: 7.2 mOhm @ 16A, 10V
Status: obsolete (EOL)
Popularity: medium

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