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Same model may have multiple batches, images only for reference.
IRG4BC20WPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC20WPBF

Part No IRG4BC20WPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR | IGBT 600V 13A 60W TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 13A
Current - Collector Pulsed (Icm) 52A
Vce(on) (Maximum) at Vge, Ic 2.6V at 15V, 6.5A
Maximum Power 60W
Switching Energy 60μJ (on), 80μJ (off)
Input Type Standard
Gate Charge 26nC
Td (on/off) at 25°C 22ns/110ns
Test Condition 480V, 6.5A, 50Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188232-IRG4BC20WPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC20WPBF CAD Model

Description

The Infineon Technologies IRG4BC20WPBF is an obsolete through-hole IGBT transistor. Infineon Technologies manufactures it.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 13A
  • Collector-Emitter Saturation Voltage: 2.6V @ 15V gate-emitter voltage and 6.5A collector current
  • Gate Charge: 26nC
  • Switching Energy (On): 60μJ
  • Switching Energy (Off): 80μJ
  • Package: TO-220AB
  • Packaging: Tube
  • RoHS Compliance: RoHS
  • REACH SVHC Compliance: Not Affected

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