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MUN5112T1G

Part No MUN5112T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 202MW SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 60 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 202mW
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 105104-MUN5112T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5112T1G CAD Model

Description

Product Overview: MUN5112T1G from ON Semiconductor

The MUN5112T1G is a high-performance, dual digital transistor designed and manufactured by ON Semiconductor. This product is a testament to ON Semiconductor's commitment to providing innovative solutions that enhance energy efficiency and power management in electronic circuits. The MUN5112T1G combines two transistors in a single SOT-363 package, offering designers a compact, space-saving option for their circuit designs.

Key Features

  • Configuration: The MUN5112T1G features a monolithic dual configuration, which includes two NPN transistors with a common emitter. This setup allows for high-density component placement and simplifies the PCB layout process.
  • Package: Enclosed in a small SOT-363 surface-mount package, the MUN5112T1G is optimized for automated assembly processes and is suitable for use in applications where space is at a premium.
  • Current Handling: Each transistor in the MUN5112T1G can handle a continuous collector current of up to 100 mA, making it suitable for a variety of switching and amplification applications.
  • Low V<sub>CE(sat): The device exhibits low collector-emitter saturation voltage, which translates to reduced power consumption and improved efficiency in operation.
  • Complementary PNP Type: ON Semiconductor also offers a complementary PNP type, providing flexibility in designing push-pull or other types of complementary circuits.

Applications

The MUN5112T1G is designed for general-purpose use in a wide array of applications. It is particularly well-suited for:

  • Inverter circuits
  • Interface circuits
  • Driver stages in amplifiers
  • Switching circuits

ON Semiconductor's MUN5112T1G is a reliable and efficient solution for designers seeking to optimize their circuit designs with a dual transistor option. Its combination of high performance, compact packaging, and energy efficiency makes it an excellent choice for modern electronic applications where space and power are critical considerations.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MUN5112T1G is no exception. It is produced to meet the highest industry standards for reliability and performance, ensuring that it meets the needs of even the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,980 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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