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Same model may have multiple batches, images only for reference.
FDMC2610 Real Image
Same model may have multiple batches, images only for reference.

FDMC2610

Part No FDMC2610
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2.2A POWER33-8
Datasheet
FDMC2610 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 960pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MLP (3.3x3.3)
Dimension 8-PowerWDFN
Win Source Part Number 016022-FDMC2610
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMC2610 CAD Model

Description

The FDMC2610 is an N-Channel MOSFET power transistor manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Drive Voltage: 6V (Max Rds On), 10V (Min Rds On)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current (at 25°C): 2.2A (Ta), 9.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Package: 8-MLP (3.3x3.3)
  • Maximum Input Capacitance: 960pF @ 100V

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3985 $52.7820
28+ $3.6091 $101.0548
43+ $3.4963 $150.3409
60+ $3.3835 $203.0100
77+ $3.2707 $251.8439
103+ $2.9324 $302.0372
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Availability: 5,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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