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Same model may have multiple batches, images only for reference.
IRG4PC50SDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC50SDPBF

Part No IRG4PC50SDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 70A 200W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Maximum) at Vge, Ic 1.36V at 15V, 41A
Maximum Power 200W
Switching Energy 720μJ (on), 8.27mJ (off)
Input Type Standard
Gate Charge 180nC
Td (on/off) at 25°C 33ns/650ns
Test Condition 480V, 41A, 5Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188283-IRG4PC50SDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PC50SDPBF CAD Model

Description

The Infineon Technologies IGBT (Insulated Gate Bipolar Transistor) is a high-performance electronic component designed for use in power electronics applications.

  • Current Collector Pulsed (Icm): 140A
  • Switching Energy (on): 720μJ
  • Switching Energy (off): 8.27mJ
  • Gate Charge: 180nC
  • Package: TO-247AC
  • Maximum Power Rating: 200W
  • Voltage Collector Emitter Breakdown (Maximum): 600V
  • Current Collector (Ic) (Maximum): 70A
  • Temperature Range: -55°C to 150°C

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2+ $28.3112 $56.6224
5+ $23.2297 $116.1485
7+ $22.5038 $157.5266
10+ $21.7778 $217.7780
12+ $21.0519 $252.6228
16+ $18.8741 $301.9856
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