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Same model may have multiple batches, images only for reference.
IRG4PSC71KD Real Image
Same model may have multiple batches, images only for reference.

IRG4PSC71KD

Part No IRG4PSC71KD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A) | IGBT 600V 85A 350W SUPER247
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 85A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) at Vge, Ic 2.3V at 15V, 60A
Maximum Power 350W
Switching Energy 3.95mJ (on), 2.33mJ (off)
Input Type Standard
Gate Charge 340nC
Td (on/off) at 25°C 82ns/282ns
Test Condition 480V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 82ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-274AA
Supplier Device Package SUPER-247 (TO-274AA)
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188306-IRG4PSC71KD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PSC71KD CAD Model

Description

The Infineon Technologies IRG4PSC71KD is a through-hole IGBT transistor with a reverse recovery time of 82ns.

  • Current Collector Pulsed: 200A
  • Switching Energy (on): 3.95mJ
  • Switching Energy (off): 2.33mJ
  • Input Type: Standard
  • Gate Charge: 340nC
  • Package: SUPER-247 (TO-274AA)
  • Maximum Collector Current: 85A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power: 350W
  • Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 60A
  • Status: Obsolete
  • Supply and demand status: Limited

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