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Same model may have multiple batches, images only for reference.
IRG7PH44K10DPBF Real Image
Same model may have multiple batches, images only for reference.

IRG7PH44K10DPBF

Part No IRG7PH44K10DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 1200V 70A 320W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Maximum) at Vge, Ic 2.4V at 15V, 25A
Maximum Power 320W
Switching Energy 2.1mJ (on), 1.3mJ (off)
Input Type Standard
Gate Charge 200nC
Td (on/off) at 25°C 75ns/315ns
Test Condition 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) 130ns
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188330-IRG7PH44K10DPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG7PH44K10DPBF CAD Model

Description

The Infineon Technologies IRG7PH44K10DPBF is a through-hole IGBT transistor with a collector current of 70A and a collector-emitter voltage of 1200V.

  • Reverse Recovery Time: 130ns
  • Switching Energy: 2.1mJ (on) and 1.3mJ (off)
  • Gate Charge: 200nC
  • Maximum Power: 320W
  • Package: TO-247AC
  • Status: obsolete
  • Operating Temperature: -40°C to 150°C
  • Ideal for: high voltage, high current applications such as motor control and power inverters.

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