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Same model may have multiple batches, images only for reference.
IRGIB6B60KD116P Real Image
Same model may have multiple batches, images only for reference.

IRGIB6B60KD116P

Part No IRGIB6B60KD116P
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 11A 38W TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 11A
Current - Collector Pulsed (Icm) 22A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 5A
Maximum Power 38W
Switching Energy 110μJ (on), 135μJ (off)
Input Type Standard
Gate Charge 18.2nC
Td (on/off) at 25°C 25ns/215ns
Test Condition 400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-220-3 Full Pack
Supplier Device Package TO-220AB Full-Pak
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188354-IRGIB6B60KD116P
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGIB6B60KD116P CAD Model

Description

The Infineon Technologies 1188354-IRGIB6B60KD116P is an NPT IGBT transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 11A.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 11A
  • Maximum Power: 38W
  • Maximum On-State Voltage: 2.2V @ 15V and 5A
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Reverse Recovery Time: 70ns
  • Switching Energy (on): 110μJ
  • Switching Energy (off): 135μJ
  • Package: TO-220AB Full-Pak

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