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Same model may have multiple batches, images only for reference.
IRGPF50F Real Image
Same model may have multiple batches, images only for reference.

IRGPF50F

Part No IRGPF50F
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A) | IGBT FAST 900V 51A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 900V
Current - Collector (Ic) (Maximum) 51A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 28A
Maximum Power 200W
Input Type Standard
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188389-IRGPF50F
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGPF50F CAD Model

Description

The Infineon Technologies IGBT is a high-performance device designed for use in Discrete Semiconductor Products.

  • Current - Collector (Ic) (Maximum): 51A
  • Voltage - Collector Emitter Breakdown (Maximum): 900V
  • Mounting Style: Through Hole
  • Vce(on) (Maximum) @ Vge, Ic: 2.7V @ 15V, 28A
  • Maximum Power: 200W
  • Supply and Demand Status: Limited

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