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Same model may have multiple batches, images only for reference.
IRL2505SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL2505SPBF

Part No IRL2505SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 104A D2PAK
Datasheet
IRL2505SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 130nC @ 5V
Max Input Capacitance 5000pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 54A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 083713-IRL2505SPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRL2505SPBF CAD Model

Description

The Infineon Technologies 083713-IRL2505SPBF is an N-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 104A (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 104A (Tc)
  • Case/Package: D2PAK
  • Maximum Power Dissipation: 3.8W (Ta) or 200W (Tc)
  • Maximum Rds On: 8 mOhm @ 54A, 10V
  • Gate Charge: 130nC @ 5V
  • Product Category: Discrete Semiconductor Product
  • Commonly Used in: Power Management
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
2+ $29.1044 $58.2088
5+ $23.8806 $119.4030
7+ $23.1343 $161.9401
9+ $22.3880 $201.4920
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
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