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Same model may have multiple batches, images only for reference.
IRL2910PBF Real Image
Same model may have multiple batches, images only for reference.

IRL2910PBF

Part No IRL2910PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 55A TO-220AB
Datasheet
IRL2910PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 140nC @ 5V
Max Input Capacitance 3700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047438-IRL2910PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL2910PBF CAD Model

Description

The Infineon Technologies IRL2910PBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 100V.

  • Continuous Drain Current: 55A @ 25°C
  • Maximum Power Dissipation: 200W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Case/Package: TO-220AB
  • Maximum Rds On: 26 mOhm @ 29A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.4986 $62.4930
9+ $11.7075 $105.3675
14+ $11.3120 $158.3680
20+ $10.5209 $210.4180
25+ $10.1254 $253.1350
31+ $9.7299 $301.6269
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,860 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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