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Same model may have multiple batches, images only for reference.
IRL2910SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL2910SPBF

Part No IRL2910SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 55A D2PAK
Datasheet
IRL2910SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 140nC @ 5V
Max Input Capacitance 3700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040791-IRL2910SPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRL2910S
Introduction Date April 30, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IRL2910SPBF CAD Model

Description

The Infineon Technologies IRL2910SPBF is a MOSFET transistor with a maximum power dissipation of 3.8W (Ta) and 200W (Tc).

  • Maximum Power Dissipation: 3.8W (Ta) and 200W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 55A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 140nC @ 5V
  • Maximum Rds On at Id,Vgs: 26 mOhm @ 29A, 10V
  • Halogen-Free: Yes
  • RoHS Compliant: Yes
  • Suitable for: various electronic applications, such as power supplies, motor control, and lighting.

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