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IRL3102PBF

Part No IRL3102PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 61A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 58nC @ 4.5V
Max Input Capacitance 2500pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 37A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069689-IRL3102PBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3102PBF CAD Model

Description

The Infineon Technologies IRL3102PBF is a MOSFET transistor with a maximum power dissipation of 89W (Tc).

  • Maximum Power Dissipation: 89W (Tc)
  • Mounting Type: Through-hole
  • Package: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Supply and Demand Status: limited
  • Ideal for: applications that require a maximum Rds On @ Id, Vgs of 13 mOhm @ 37A, 7V
  • Suitable for: applications that require a maximum gate charge of 58nC @ 4.5V

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