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Same model may have multiple batches, images only for reference.
IRL3102STRR Real Image
Same model may have multiple batches, images only for reference.

IRL3102STRR

Part No IRL3102STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 61A D2PAK
Datasheet
IRL3102STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 58nC @ 4.5V
Max Input Capacitance 2500pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 37A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047441-IRL3102STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3102STRR CAD Model

Description

The Infineon Technologies IRL3102STRR is a high-performance N-channel MOSFET that has been designed for use in a variety of applications.

  • Power Dissipation: 89W (Tc)
  • Continuous Drain Current: 61A (Tc)
  • Maximum Rds On: 13 mOhm @ 37A, 7V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,030 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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