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Same model may have multiple batches, images only for reference.
IRL3302STRL Real Image
Same model may have multiple batches, images only for reference.

IRL3302STRL

Part No IRL3302STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 39A D2PAK
Datasheet
IRL3302STRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 23A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047453-IRL3302STRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3302STRL CAD Model

Description

The Infineon Technologies 1047453-IRL3302STRL is an N-channel MOSFET transistor that is designed to be used in various electronic circuits.

  • Power Dissipation: 57W (Tc)
  • Package: D2PAK
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 39A (Tc)
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 31nC @ 4.5V
  • Maximum Input Capacitance: 1300pF @ 15V
  • Maximum Rds On: 20 mOhm @ 23A, 7V
  • Lifecycle Status: Obsolete (EOL)
  • Popularity Rating: Medium

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