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Same model may have multiple batches, images only for reference.
IRL3502SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3502SPBF

Part No IRL3502SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 110A D2PAK
Datasheet
IRL3502SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 110nC @ 4.5V
Max Input Capacitance 4700pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 64A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047464-IRL3502SPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3502SPBF CAD Model

Description

The Infineon Technologies 1047464-IRL3502SPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 110A (Tc)
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 110nC @ 4.5V
  • Maximum Input Capacitance: 4700pF @ 15V
  • Package: D2PAK
  • Mounting: SMD (SMT)
  • Applications: Industrial and power management

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Quantity Unit Price Ext. Price
4+ $16.9739 $67.8956
9+ $13.9270 $125.3430
13+ $13.4927 $175.4051
18+ $13.0573 $235.0314
23+ $12.6218 $290.3014
31+ $11.3167 $350.8177
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