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Same model may have multiple batches, images only for reference.
IRL3714S Real Image
Same model may have multiple batches, images only for reference.

IRL3714S

Part No IRL3714S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A D2PAK
Datasheet
IRL3714S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 670pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047471-IRL3714S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3714S CAD Model

Description

The Infineon Technologies IRL3714S is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Maximum Power Dissipation: 47W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 36A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 9.7nC @ 4.5V
  • Maximum Input Capacitance: 670pF @ 10V
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 18A, 10V
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Popularity: Medium

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