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Same model may have multiple batches, images only for reference.
IRL3715LPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3715LPBF

Part No IRL3715LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 54A TO-262
Datasheet
IRL3715LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1060pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 71W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047479-IRL3715LPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3715LPBF CAD Model

Description

The Infineon Technologies 1047479-IRL3715LPBF is a N-channel MOSFET transistor.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Input Capacitance: 1060pF @ 10V
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 26A, 10V
  • Package: TO-262
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting Type: Through Hole
  • Maximum Gate-Source Voltage: ±20V
  • Continuous Drain Current at 25°C: 54A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Package Contains: 50 pieces

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