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IRL520NSPBF

Part No IRL520NSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A D2PAK
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 128065-IRL520NSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL520NSPBF CAD Model

Description

The Infineon Technologies IRL520NSPBF is a high-performance N-channel MOSFET that is designed for use in various applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 10A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 180 mOhm @ 6A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Package: D2PAK
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 3.8W (Ta), 48W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,600 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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