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Same model may have multiple batches, images only for reference.
IRL520NSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRL520NSTRLPBF

Part No IRL520NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A D2PAK
Datasheet
IRL520NSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 143341-IRL520NSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL520NSTRLPBF CAD Model

Description

The Infineon Technologies IRL520NSTRLPBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 10A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum Rds On: 180 mOhm @ 6A and 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Package: D2PAK package
  • Maximum Gate Charge: 20nC @ 5V
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Input Capacitance: 440pF @ 25V
  • Category: Discrete Semiconductor Products

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95+ $1.1045 $104.9275
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330+ $0.9180 $302.9400
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