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Same model may have multiple batches, images only for reference.
IRL6342TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRL6342TRPBF

Part No IRL6342TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.9A 8SOIC
Datasheet
IRL6342TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 10μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1025pF @ 25V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 14.6 mOhm @ 9.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1047519-IRL6342TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL6342TRPBF CAD Model

Description

The Infineon Technologies IRL6342TRPBF is a MOSFET transistor with N-channel polarity.

  • Polarity: N-channel
  • Power Dissipation (Ta): 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 9.9A (Ta)
  • Maximum Rds On: 14.6 mOhm @ 9.9A, 4.5V
  • Gate-Source Threshold Voltage: 1.1V @ 10μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Input Capacitance: 1025pF @ 25V
  • Maximum Gate-Source Voltage: ±12V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD (SMT)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3064 $50.5560
400+ $0.2515 $100.6000
620+ $0.2436 $151.0320
850+ $0.2357 $200.3450
1,100+ $0.2279 $250.6900
1,470+ $0.2043 $300.3210
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