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Same model may have multiple batches, images only for reference.
IRL6372TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRL6372TRPBF

Part No IRL6372TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8.1A 8SOIC
Datasheet
IRL6372TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.1A
Maximum Rds On at Id,Vgs 17.9 mOhm @ 8.1A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 10μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1020pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1047520-IRL6372TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRL6372TRPBF CAD Model

Description

The 426343 is a dual N-channel FET with a logic level gate feature manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.1A @ 25°C
  • Maximum Power Dissipation: 2W
  • Maximum Rds On @ Id,Vgs: 17.9 mOhm @ 8.1A, 4.5V
  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Gate-Source Threshold Voltage: 1.1V @ 10μA
  • Maximum Gate Charge: 11nC @ 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,650 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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