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Same model may have multiple batches, images only for reference.
IRL8113STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRL8113STRLPBF

Part No IRL8113STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 105A D2PAK
Datasheet
IRL8113STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2840pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047527-IRL8113STRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL8113STRLPBF CAD Model

Description

The Infineon Technologies IRL8113STRLPBF is a MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 110W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 105A
  • Maximum Rds On @ Id,Vgs: 6 mOhm @ 21A, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 35nC @ 4.5V
  • Maximum Input Capacitance: 2840pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Technology: N-Channel
  • Mounting: SMD (SMT)
  • Packaging: Reel - TR
  • Case / Package: D2PAK
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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