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IRLH5036TR2PBF

Part No IRLH5036TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A 5X6 PQFN
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 150μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 5360pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.6W (Ta), 160W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 140604-IRLH5036TR2PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLH5036TR2PBF CAD Model

Description

The Infineon Technologies IRLH5036TR2PBF is a power MOSFET transistor designed for use in high voltage applications.

  • Maximum Drain-Source Voltage: 60V
  • Continuous Drain Current: 20A (Ta) and 100A (Tc)
  • Package: PQFN (5x6)
  • Mounting: Surface Mountable
  • Status: Obsolete/End of Life
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.8307 $58.3070
25+ $4.7842 $119.6050
38+ $4.6347 $176.1186
52+ $4.4853 $233.2356
67+ $4.3356 $290.4852
90+ $3.8872 $349.8480
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Availability: 7,400 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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