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Same model may have multiple batches, images only for reference.
IRLH5036TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLH5036TRPBF

Part No IRLH5036TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A 8-PQFN
Datasheet
IRLH5036TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 150μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 5360pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.6W (Ta), 160W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 1047535-IRLH5036TRPBF
Family Name IRLH5036
Introduction Date April 12, 2010
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLH5036TRPBF CAD Model

Description

The IRLH5036TRPBF is an N-Channel MOSFET electronic component manufactured by Infineon Technologies. It is designed for use in discrete semiconductor products and has a maximum power dissipation of 3.6W (Ta) and 160W (Tc).

  • Power Dissipation: 3.6W (Ta) and 160W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 20A (Ta) and 100A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 150μA
  • Gate Charge: 90nC @ 10V
  • Package: PQFN (5x6)
  • Operating Temperature: -55°C to 150°C
  • Drive Voltage: 4.5V to 10V
  • Popularity: High

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