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Same model may have multiple batches, images only for reference.
IRLI2910PBF Real Image
Same model may have multiple batches, images only for reference.

IRLI2910PBF

Part No IRLI2910PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 31A TO220FP
Datasheet
IRLI2910PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 140nC @ 5V
Max Input Capacitance 3700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 142473-IRLI2910PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLI2910PBF CAD Model

Description

The Infineon Technologies 142473-IRLI2910PBF is an N-Channel MOSFET designed for use in various power switching applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 31A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 140nC @ 5V
  • Maximum Rds On @ Id,Vgs: 26 mOhm @ 16A, 10V
  • Package: TO-220AB Full-Pak
  • Mounting: Through-hole mounting
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited

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