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IRLIZ44NPBF Real Image IRLIZ44NPBF Real Image1 IRLIZ44NPBF Real Image2
Same model may have multiple batches, images only for reference.
IRLIZ44NPBF Real Image IRLIZ44NPBF Real Image1 IRLIZ44NPBF Real Image2
IRLIZ44NPBF Real Image IRLIZ44NPBF Real Image1 IRLIZ44NPBF Real Image2
Same model may have multiple batches, images only for reference.

IRLIZ44NPBF

Part No IRLIZ44NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A TO220FP
Datasheet
IRLIZ44NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 5V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 069717-IRLIZ44NPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLIZ44NPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-channel polarity electronic component with a maximum power dissipation of 45W (Tc).

  • Maximum Power Dissipation: 45W (Tc)
  • Drive Voltage: 4V (max Rds On), 10V (min Rds On)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 48nC @ 5V
  • Maximum Input Capacitance: 1700pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On: 22 mOhm @ 17A, 10V
  • Mounting Type: Through Hole
  • Package: TO-220AB Full-Pak

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