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Same model may have multiple batches, images only for reference.
IRLL3303PBF Real Image
Same model may have multiple batches, images only for reference.

IRLL3303PBF

Part No IRLL3303PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.6A SOT223
Datasheet
IRLL3303PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 840pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 31 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1047567-IRLL3303PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLL3303PBF CAD Model

Description

The Infineon Technologies IRLL3303PBF is an N-channel polarity MOSFET technology-based product designed for discrete semiconductor applications.

  • Power Dissipation: 1W (Ta)
  • Maximum Gate-Source Voltage: ±16V
  • Popularity: medium
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5808 $51.6160
48+ $2.1176 $101.6448
74+ $2.0515 $151.8110
101+ $1.9853 $200.5153
131+ $1.9191 $251.4021
175+ $1.7206 $301.1050
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Availability: 2,160 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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