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Same model may have multiple batches, images only for reference.
IRLML2803TRPBF-1
Same model may have multiple batches, images only for reference.

IRLML2803TRPBF-1

Part No IRLML2803TRPBF-1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.2A SOT23  /  N-Channel 30 V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23
Datasheet
IRLML2803TRPBF-1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Rds On (Max) @ Id, Vgs 250mOhm @ 910mA, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 85 pF @ 25 V
Power Dissipation (Max) 540mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 448-IRLML2803TRPBF-1TR,SP001558326
Standard Package 3,000
Win Source Part Number 1065630-IRLML2803TRPBF-1
Ultra Librarian 3D Model Ultra Librarian IRLML2803TRPBF-1 CAD Model

Description

The IRLML2803TRPBF-1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET™
  • Package: surface mount
  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id) @ 25°C: 1.2A (Ta)
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 250mOhm @ 910mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
  • Power Dissipation (Max): 540mW (Ta)
  • Temperature Range: -55°C to 150°C (TJ)

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