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Same model may have multiple batches, images only for reference.
IRLMS4502TR Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLMS4502TR

Part No IRLMS4502TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 5.5A 6-TSOP
Datasheet
IRLMS4502TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA
Max Gate Charge 33nC @ 5V
Max Input Capacitance 1820pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6
Win Source Part Number 105101-IRLMS4502TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLMS4502TR CAD Model

Description

The Infineon Technologies IRLMS4502TR is a P-Channel MOSFET transistor that offers a drain-source breakdown voltage of 12V and a continuous drain current of 5.5A at 25°C.

  • Maximum Power Dissipation: 1.7W (Ta)
  • Maximum Rds On: 42 mOhm @ 5.5A and 4.5V
  • Gate-Source Threshold Voltage: 600mV @ 250μA
  • Maximum Gate Charge: 33nC @ 5V
  • Maximum Input Capacitance: 1820pF @ 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: Micro6(TSOP-6)

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5587 $58.6635
255+ $0.4585 $116.9175
395+ $0.4441 $175.4195
540+ $0.4298 $232.0920
700+ $0.4155 $290.8500
935+ $0.3725 $348.2875
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Availability: 14,000 pieces
MOQ: 105 pcs
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