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Same model may have multiple batches, images only for reference.
IRLMS6702TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLMS6702TRPBF

Part No IRLMS6702TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.4A 6-TSOP
Datasheet
IRLMS6702TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8.8nC @ 4.5V
Max Input Capacitance 210pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6
Win Source Part Number 017782-IRLMS6702TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLMS6702TRPBF CAD Model

Description

The Infineon Technologies IRLMS6702TRPBF is a P-channel MOSFET with a drain-source breakdown voltage of 20V and continuous drain current of 2.4A (Ta).

  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Rds On at Id,Vgs: 200 mOhm @ 1.6A, 4.5V
  • Mounting: SMD (SMT) technology
  • Maximum Power Dissipation: 1.7W (Ta)
  • Package: Micro6(TSOP-6)

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1456 $50.2320
840+ $0.1195 $100.3800
1,300+ $0.1157 $150.4100
1,790+ $0.1120 $200.4800
2,310+ $0.1083 $250.1730
3,090+ $0.0971 $300.0390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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