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Same model may have multiple batches, images only for reference.
IRLR3714PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3714PBF

Part No IRLR3714PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A DPAK
Datasheet
IRLR3714PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 670pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047606-IRLR3714PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRLR3714PBF CAD Model

Description

The IRLR3714PBF from Infineon Technologies is a N-Channel MOSFET transistor.

  • Power Dissipation (Max): 47W (Tc)
  • Continuous Drain Current: 36A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On at Id, Vgs: 20 mOhm @ 18A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 9.7nC @ 4.5V
  • Maximum Input Capacitance: 670pF @ 10V
  • Case/Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supply and Demand Status: Sufficient
  • Package Quantity: 75

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