IRLR3714PBF

Part No IRLR3714PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 670pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047606-IRLR3714PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75

Description

The IRLR3714PBF from Infineon Technologies is a N-Channel MOSFET transistor. It has a maximum power dissipation of 47W (Tc) and a continuous drain current of 36A (Tc) at 25°C. The drain-source breakdown voltage is 20V and the maximum Rds On at Id, Vgs is 20 mOhm @ 18A, 10V. It has a maximum gate-source voltage of ±20V and a gate-source threshold voltage of 3V @ 250μA. The maximum gate charge is 9.7nC @ 4.5V and the maximum input capacitance is 670pF @ 10V. It is packaged in a D-Pak case with TO-252-3, DPak (2 Leads + Tab), SC-63 dimensions. The supply and demand status is sufficient and it comes in a package of 75.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
11+ $4.8840 $53.7240
25+ $4.0080 $100.2000
39+ $3.8830 $151.4370
54+ $3.7570 $202.8780
69+ $3.6320 $250.6080
93+ $3.2560 $302.8080
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 46,600 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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