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Same model may have multiple batches, images only for reference.
IRLR4343TR Real Image
Same model may have multiple batches, images only for reference.

IRLR4343TR

Part No IRLR4343TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 26A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 740pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 140999-IRLR4343TR
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian IRLR4343TR CAD Model

Description

The Infineon Technologies IRLR4343TR is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 26A (Tc)
  • Maximum Rds On at Id,Vgs: 50 mOhm @ 4.7A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 42nC @ 10V
  • Package: D-Pak package
  • Mounting Technology: SMD (SMT)
  • Power Dissipation (max): 79W (Tc)
  • Suitable for: Use in power management applications

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Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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Availability: 5,125 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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