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Same model may have multiple batches, images only for reference.
IRLR4343TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR4343TRPBF

Part No IRLR4343TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 26A DPAK
Datasheet
IRLR4343TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 740pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047621-IRLR4343TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian IRLR4343TRPBF CAD Model

Description

The Infineon Technologies IRLR4343TRPBF is an N-Channel MOSFET transistor that comes in a D-Pak package.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 26A @ 25°C
  • Maximum Power Dissipation: 79W
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Rds On: 50 mOhm @ 4.7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,120 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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