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Same model may have multiple batches, images only for reference.
IRLU3103 Real Image
Same model may have multiple batches, images only for reference.

IRLU3103

Part No IRLU3103
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 55A I-PAK
Datasheet
IRLU3103 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047675-IRLU3103
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLU3103 CAD Model

Description

The Infineon Technologies IRLU3103 is a N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 107W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 55A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On: 19 mOhm @ 33A, 10V
  • Mounting: Through hole
  • Packaging: Tube/rail
  • Case/Package: I-Pak, TO-251-3 short leads, IPak, TO-251AA
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Manufacturer: Infineon Technologies

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