IRLU3303PBF

Part No IRLU3303PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A I-PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205487-IRLU3303PBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 75

Description

The Infineon Technologies IRLU3303PBF is a MOSFET transistor with N-Channel polarity. Its maximum power dissipation is 68W (Tc), and it has a drain-source breakdown voltage of 30V. The continuous drain current at 25°C is 35A (Tc). This transistor has a maximum gate-source voltage of ±16V and a maximum Rds On at Id,Vgs of 31 mOhm @ 21A, 10V. The IRLU3303PBF is mounted using through-hole technology and is packaged in an I-Pak case. Its gate-source threshold voltage is 1V @ 250μA, and it has a maximum gate charge of 26nC @ 4.5V. This transistor is commonly used in power management applications, and it is compliant with halogen-free requirements.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
90+ $0.5660 $50.9400
220+ $0.4640 $102.0800
335+ $0.4500 $150.7500
460+ $0.4350 $200.1000
595+ $0.4210 $250.4950
800+ $0.3770 $301.6000
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 7,170 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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