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Same model may have multiple batches, images only for reference.
IRLU3802PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLU3802PBF

Part No IRLU3802PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 84A I-PAK
Datasheet
IRLU3802PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 4.5V
Gate-Source Threshold Voltage 1.9V @ 250μA
Max Gate Charge 41nC @ 5V
Max Input Capacitance 2490pF @ 6V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047683-IRLU3802PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLU3802PBF CAD Model

Description

The Infineon Technologies IRLU3802PBF is a MOSFET technology device with N-channel polarity.

  • Maximum Power Dissipation: 88W (Tc)
  • Packaging: tube/rail
  • Mounting Type: through hole
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: I-Pak
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 84A (Tc)
  • Gate-Source Threshold Voltage: 1.9V @ 250μA
  • Maximum Gate Charge: 41nC @ 5V
  • Maximum Input Capacitance: 2490pF @ 6V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 8.5 mOhm @ 15A, 4.5V
  • Supply and Demand: sufficient

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