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IRLU8729-701PBF

Part No IRLU8729-701PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 58A IPAK / 30 V, HEXFET Power MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.35V @ 25μA
Gate Charge (Qg) (Maximum) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 1350pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 55W (Tc)
Rds On (Maximum) @ Id, Vgs 8.9 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 777125-IRLU8729-701PBF
Popularity Medium
Supply and Demand Status Limited
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRLU8729-701PBF CAD Model

Description

The Infineon Technologies HEXFET MOSFET is a through-hole component designed for use in discrete semiconductor products.

  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 58A @ 25°C
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Power Dissipation: 55W @ Tc
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)
  • Drive Voltage: 4.5V (max Rds On) and 10V (min Rds On)
  • Channel Type: N
  • Gate Charge: 16nC (maximum) @ Vgs 4.5V
  • Input Capacitance: 1350pF (maximum) @ Vds 15V
  • ECCN: EAR99
  • Estimated EOL Date: Obsolete/End of Life

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