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IRLZ34NS

Part No IRLZ34NS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 55V 30A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 35mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 880pF at 25V
Power Dissipation (Maximum) 3.8W, 68W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188695-IRLZ34NS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ34NS CAD Model

Description

The Infineon Technologies IRLZ34NS MOSFET is a high-performance N-channel power MOSFET that is widely used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Rds On @ Id,Vgs: 35mOhm @ 16A, 10V
  • Package: D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 175°C
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7722 $57.9150
185+ $0.6336 $117.2160
285+ $0.6138 $174.9330
390+ $0.5941 $231.6990
505+ $0.5742 $289.9710
675+ $0.5148 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,199 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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