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Same model may have multiple batches, images only for reference.
IRLZ34NSTRR Real Image
Same model may have multiple batches, images only for reference.

IRLZ34NSTRR

Part No IRLZ34NSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A D2PAK
Datasheet
IRLZ34NSTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047704-IRLZ34NSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ34NSTRR CAD Model

Description

The Infineon Technologies IRLZ34NSTRR is an N-Channel MOSFET designed for use in high voltage applications.

  • Maximum Power Dissipation: 3.8W (Ta), 68W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Operating Temperature Range: -55°C to 175°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Packaging: D2PAK case
  • Mounting: SMD (SMT)
  • Maximum Rds On at Id, Vgs: 35 mOhm @ 16A, 10V
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced

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