The IRS27952SPBF is a high-voltage, high-speed power MOSFET driver from Infineon Technologies. It is designed to drive N-channel MOSFETs in half-bridge configurations. This driver features programmable dead-time control, enabling optimization of efficiency and EMI performance in various power conversion applications.

Applications:

• Half-bridge converters
• Power supplies
• Electronic ballasts
• Class D audio amplifiers
• Induction heating systems

Features:

• High-side and low-side driver
• Programmable dead-time
• Bootstrap operation
• Under-voltage lockout (UVLO)
• Over-current protection (OCP)

Benefits:

• Optimized efficiency and EMI performance through dead-time control
• Simplified half-bridge design
• Robust protection against over-current and under-voltage conditions
• High noise immunity
• Reduced component count

Additional Details:

The IRS27952SPBF features a high-side and low-side driver, enabling efficient control of both MOSFETs in a half-bridge configuration. The programmable dead-time allows the user to optimize the switching behavior for specific applications, improving efficiency and reducing EMI. The bootstrap operation simplifies the high-side gate drive implementation. The under-voltage lockout (UVLO) protects the MOSFETs from damage during start-up and shut-down. The over-current protection (OCP) limits the current through the MOSFETs, preventing damage in overload conditions. It can operate with supply voltages up to 20V and can drive MOSFETs with gate charges up to several nC. The device is typically packaged in an SOIC package. This MOSFET driver provides a comprehensive set of features for efficient and reliable control of half-bridge power converters.