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ISP650P06NMXTSA1

Part No ISP650P06NMXTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 3.7A SOT223-4 / P-Channel 60 V 3.7A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 30 V
Power Dissipation (Max) 1.8W (Ta) , 4.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Base Product Number ISP650
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338222-ISP650P06NMXTSA1
Ultra Librarian 3D Model Ultra Librarian ISP650P06NMXTSA1 CAD Model

Description

The Infineon OptiMOS™ ISP650P06NMXTSA1 MOSFET is a P-channel device that features a drain-to-source voltage of 60V and a power dissipation of 1.8W (Ta) and 4.2W (Tc).

  • Channel Type: P-Channel
  • Drain-to-Source Voltage: 60V
  • Power Dissipation: 1.8W (Ta) and 4.2W (Tc)
  • Package: TO-261-4, TO-261AA
  • Standard Package: 1,000
  • Vgs (Max): ±20V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4662 $51.3170
85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,510 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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